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Proceedings Paper

Long-wavelength Ge/GaAs Heterostructure Avalanche Photodiodes For Monolithic Integration
Author(s): J. J. Rosato; F. C. Jain
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Paper Abstract

A novel photodetector for long-wavelength fiber optical communication systems is presented and analyzed. The Ge/GaAs Heterostructure Avalanche Photodiode (HAPD) consists of a thin epitaxial p+-n-n+ or p+-n-v-n+ Ge structure grown on either semi-insulating or n-GaAs substrates. The use of a Ge/GaAs heterostructure improves the performance of the HAPD relative to conventional Ge avalanche photodiodes. The ease of fabrication and projected low cost make this photodiode particularly attractive for monolithic integration. Several methods for integrating the HAPD with other electronic and optoelectronic devices are described.

Paper Details

Date Published: 14 January 1987
PDF: 8 pages
Proc. SPIE 0722, Components for Fiber Optic Applications, (14 January 1987); doi: 10.1117/12.937670
Show Author Affiliations
J. J. Rosato, University of Connecticut (United States)
F. C. Jain, University of Connecticut (United States)

Published in SPIE Proceedings Vol. 0722:
Components for Fiber Optic Applications
Vincent J. Tekippe, Editor(s)

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