A highly reliable PINFET has been developed and manufactured by all solder construction using passivated InGaAs PIN photodetector. At operation voltage of -5V, the PIN pnotodetector has typical characteristics of 3nA in dark current, 0.3pF in capacitance and 0.75A/W in responsivity. The PINFET receiver circuit is designed using these PIN photodetectors. Extensive SPICE simulation has been performed to reduce the effect of stray capacitances thus to improve the manufacturing yield and quality to meet the 3σstatistical limits for all the parameters. Lifetests have been performed on the 16 PIN photodetectors and 10 fully packaged PINFETs with equivalent room temperature operation of 1.7 x 107 and 2.2 x 105 hours respectively without failure.

Date Published: 23 February 1987
PDF: 6 pages
Proc. SPIE 0717, Reliability Considerations in Fiber Optic Applications, (23 February 1987); doi: 10.1117/12.937481

Published in SPIE Proceedings Vol. 0717:
Reliability Considerations in Fiber Optic Applications
Dilip K. Paul, Editor(s)