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Proceedings Paper

Distributed Bragg-Reflector PbSnTe/PbSeTe Diode Lasers
Author(s): E. Kapon; A. Katzir
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Paper Abstract

Distributed Bragg-reflector (DBR) diode lasers were fabricated from lattice-matched Pb0.817Sn0.183 Te/PbSe0.08Te0.92 wafers grown by liquid phase epitaxy. The DBR lasers operated within a limited range of heat-sink temperatures, 8.5°-38°K, with threshold current density of 3kA/cm2 at 20°K. Single longitudinal-mode operation was obtained up to more than three times the threshold current. The DBR lasers exhibited continuous tuning range of 6 cm-1 near 775 cm-1 (12.9 μm). The average tuning rate was 0.21 cm-1/°K and was much smal-ler than that of the corresponding Fabry-Perot lasers, which was 2.3 cm-1/°K.

Paper Details

Date Published: 26 November 1983
PDF: 6 pages
Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983);
Show Author Affiliations
E. Kapon, Tel-Aviv University (Israel)
A. Katzir, Tel-Aviv University (Israel)

Published in SPIE Proceedings Vol. 0438:
Tunable Diode Laser Development and Spectroscopy Applications
Chiwoei Wayne Lo, Editor(s)

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