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Proceedings Paper

Fundamental Aspects Of Pulsed-Laser Irradiation Of Semiconductors
Author(s): G. E. Jellison Jr.; D. H. Lowndes; R. F. Wood
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Paper Abstract

Fundamental aspects of pulsed laser melting and solidification of crystalline silicon and germanium are reviewed. The discussion concentrates on time-resolved experiments performed with nanosecond pulsed lasers, although some picosecond and femtosecond experiments are also considered. The creation of amorphous material from crystalline material induced by ultrarapid melting and resolidification using either nanosecond or picosecond lasers is surveyed and the inverse process of recrystallization of a-Si by explosive crystallization is described. Finally, melting model calculations, which have proven to give a very accurate description of the pulsed laser irradiation process, are discussed.

Paper Details

Date Published: 11 March 1987
PDF: 11 pages
Proc. SPIE 0710, Excimer Lasers and Optics, (11 March 1987); doi: 10.1117/12.937293
Show Author Affiliations
G. E. Jellison Jr., Oak Ridge National Laboratory (United States)
D. H. Lowndes, Oak Ridge National Laboratory (United States)
R. F. Wood, Oak Ridge National Laboratory (United States)

Published in SPIE Proceedings Vol. 0710:
Excimer Lasers and Optics
Ting-Shan Luk, Editor(s)

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