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Proceedings Paper

Recent Developments on a 128 x 128 Indium Antimonide/FET Switch Hybrid Imager For Low-Background Applications
Author(s): Gary C. Bailey; Curtiss A. Niblack; James T. Wimmers
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Paper Abstract

By combining high-quality mesa photovoltaic indium antimonide detector material with a silicon x-y FET switch multiplexer, a useful infrared area detector has been developed. This device is intended for low-background applications, where high sensitivity is required. Initial characterization of the detector at 80 K showed a KTC limited read noise of less than 1,000 electrons, good dark current, responsivity uniformity, and a maximum readout rate of 10 MHz. The hybrid mating technology has sufficient precision to allow expansion to a 256 x 256 format. The dark current in the detector material is sufficiently low to allow full-frame integration, even with arrays as large as 256 x 256 elements.

Paper Details

Date Published: 6 November 1986
PDF: 10 pages
Proc. SPIE 0686, Infrared Detectors, Sensors, and Focal Plane Arrays, (6 November 1986); doi: 10.1117/12.936527
Show Author Affiliations
Gary C. Bailey, California Institute of Technology (United States)
Curtiss A. Niblack, Cincinnati Electronics Corporation (United States)
James T. Wimmers, Cincinnati Electronics Corporation (United States)

Published in SPIE Proceedings Vol. 0686:
Infrared Detectors, Sensors, and Focal Plane Arrays
Hideyoshi Nakamura, Editor(s)

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