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Proceedings Paper

Ka-band and Q-band Communication Amplifier
Author(s): T. Best; E. Holmes; C. Ito; Y. C. Ngan
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Paper Abstract

Two high power communication amplifiers operating in the Extremely High Frequency (EHF) spectrum are described. Both amplifiers are based on silicon double-drift IMPATT diodes for power generation. The first amplifier operates in the high gain, narrowband injection-locking mode and represents a first step toward low cost manufacturing of this type of amplifier. It is capable of 6.2 W and 31 dB gain at 36.79 GHz, with 250 MHz injection-locking bandwidth. The second amplifier operates in the low gain, wideband negative resistance mode in which there is no power output in the absence of an input signal. A state-of-the-art power output in excess of 3.5 W was achieved from 43.5 to 44.5 GHz with a nominal 3 dB gain. This amplifier is in its advanced development stage.

Paper Details

Date Published: 14 October 1983
PDF: 6 pages
Proc. SPIE 0423, Millimeter Wave Technology II, (14 October 1983); doi: 10.1117/12.936158
Show Author Affiliations
T. Best, TRW Electronics and Defense (United States)
E. Holmes, TRW Electronics and Defense (United States)
C. Ito, TRW Electronics and Defense (United States)
Y. C. Ngan, TRW Electronics and Defense (United States)

Published in SPIE Proceedings Vol. 0423:
Millimeter Wave Technology II
James C. Wiltse, Editor(s)

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