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Proceedings Paper

Gallium Arsenide Clad Optical Waveguide Modulators
Author(s): G. M. McWright; T. E. Batchman; R. F. Carson
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Paper Abstract

Computer modeling studies on planar dielectric optical waveguides clad with gallium arsenide indicate that the attenuation and mode index behave as exponentially damped sinusoids as the semiconductor thickness in increased. This effect is due to a periodic coupling between the TE0 mode of the dielectric and the lossy modes supported by the high refractive index gallium aresenide. For guided wave propagation near the semiconductor band edge, the complex permittivity of the gallium arsenide may be altered through electron-hole pair generation via second photon excitation. This pair generation process is investigated as a means of controlling guided wave propagation, and amplitude and phase modulators are examined.

Paper Details

Date Published: 30 November 1983
PDF: 7 pages
Proc. SPIE 0408, Integrated Optics III, (30 November 1983); doi: 10.1117/12.935720
Show Author Affiliations
G. M. McWright, University of Virginia (United States)
T. E. Batchman, University of Virginia (United States)
R. F. Carson, University of Virginia (United States)

Published in SPIE Proceedings Vol. 0408:
Integrated Optics III
Dennis G. Hall; Lynn D. Hutcheson, Editor(s)

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