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Proceedings Paper

Q-Switched Semiconductor Diode Lasers With Integrated Modulators
Author(s): D. Z. Tsang; J. N. Walpole
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Paper Abstract

Q-switched semiconductor diode lasers with an integrated modulator have been operated with full on/off modulation at rates of 3 GHz. In addition, modulation of the lasers has been shown up to a detector-limited frequency of 6 GHz. A new model of these devices, which includes amplified spontaneous emission and high gain, predicts the possibility of a new mode of Q-switched operation with the capacity for repetition rates of tens of gigahertz and binary pulse position modulation at rates of the order of 10 Gbit/sec.

Paper Details

Date Published: 30 November 1983
PDF: 5 pages
Proc. SPIE 0408, Integrated Optics III, (30 November 1983); doi: 10.1117/12.935716
Show Author Affiliations
D. Z. Tsang, Massachusetts Institute of Technology (United States)
J. N. Walpole, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0408:
Integrated Optics III
Dennis G. Hall; Lynn D. Hutcheson, Editor(s)

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