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Proceedings Paper

Progress In Copper Indium Diselenide Thin-Film Photovoltaic Device Research
Author(s): Allen Hermann; Ken Zweibel
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Paper Abstract

Recent results on CuInSe2 from the United States Department of Energy (DOE) Polycrystalline Thin-Film Device Program are presented. The program, managed by the Solar Energy Research Institute (SERI), encompasses mate-rials and device research in a variety of highly absorbing compound semiconductors with emphasis on CuInSe2, for which thin-film device efficiences of 11% (AM1) have been reported. This paper describes film deposition techniques including coevaporation from the elements, reactive sputtering, and spray pyrolysis. Electrical and optical characterization of the films is discussed, and experiments on control of carrier type and concentra-tion are outlined. Differences from corresponding results on single-crystal CuInSe2 are discussed in terms of defect-chemistry models. Experiments on heterojunction formation of CuInSe2 with CdS or (Cd,Zn)S are presented, and recent results in device characterization and modeling are discussed. Central problems in the achievement of higher efficiency devices are described. Low open-circuit voltages and the role of oxygen in post-deposition anneal are discussed. Scalability of techniques for the deposition of device-quality CuInSe2 is also discussed in light of the recent announcement of plans for commercialization of thin-film CdS/CuInSe2 devices.

Paper Details

Date Published: 8 September 1983
PDF: 12 pages
Proc. SPIE 0407, Photovoltaics for Solar Energy Applications II, (8 September 1983); doi: 10.1117/12.935692
Show Author Affiliations
Allen Hermann, Solar Energy Research Institute (United States)
Ken Zweibel, Solar Energy Research Institute (United States)

Published in SPIE Proceedings Vol. 0407:
Photovoltaics for Solar Energy Applications II
David Adler, Editor(s)

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