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Proceedings Paper

The Impact On Wafer Probe Yield Of Photomask Inspection Sensitivity
Author(s): George W. Brooks; Robert K. Meister
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Paper Abstract

Photomask defects have long been known to be a source of device failure at wafer probe test. Mask inspection coupled with defect repair and mask production process control is the means to reduce the number of photomask defects. Further impact on probe yield with improved photomask quality requires advances in both defect detection sensitivity and defect repair capability. This paper presents a model for considering the impact of increased defect detection sensitivity on wafer probe yield. The model integrates concepts of the frequency distribution of defects by size and the probability of fatal effect of defects. As inspection sensitivity increases and the defects found are eliminated, substantial increases in wafer probe yield can be expected. The model takes into account variables such as design linewidths, device type, critical mask levels, and defect type.

Paper Details

Date Published: 7 November 1983
PDF: 9 pages
Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); doi: 10.1117/12.935139
Show Author Affiliations
George W. Brooks, KLA Instruments Corporation (United States)
Robert K. Meister, KLA Instruments Corporation (United States)

Published in SPIE Proceedings Vol. 0394:
Optical Microlithography II: Technology for the 1980s
Harry L. Stover, Editor(s)

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