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Proceedings Paper

Improved Novolak-Based Photoresist System For Very Large Scale Integration (VLSI) Lithography.
Author(s): F. P. Alvarez; D. J. Elliott; H. F. Sandford; M. W. Legenza
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Paper Abstract

A discussion of the general parameters used in resist formulation is given. Characterization of the resist and its metal and non-metal developers includes: resist chemistry, coating properties and film thickness control, photospeed at two major wavelengths, contrast parameters, resolution capability, thermal flow properties, dry etch resistance, adhesion and removal characteristics. The new system emphasizes a higher degree of manufacturing control to increase yields in high resolution device manufacturing.

Paper Details

Date Published: 7 November 1983
PDF: 10 pages
Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); doi: 10.1117/12.935133
Show Author Affiliations
F. P. Alvarez, Shipley Company Incorporated (United States)
D. J. Elliott, Shipley Company Incorporated (United States)
H. F. Sandford, Shipley Company Incorporated (United States)
M. W. Legenza, Shipley Company Incorporated (United States)

Published in SPIE Proceedings Vol. 0394:
Optical Microlithography II: Technology for the 1980s
Harry L. Stover, Editor(s)

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