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Proceedings Paper

Registration And Distortion Compensating Techniques For A Large Field X-Ray Exposure System
Author(s): B. Fay
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Paper Abstract

This paper describes the application to the case of a large field X-ray exposure system of a very high accuracy registration technique developed for a small field step and repeat submicron lithography system. A major problem in large field parallel transfer lithography methods is the difficulty to achieve good overlay accuracy across the whole field as a result of distortion effects associated with both wafer and mask. A simple distortion compensating scheme based on the previously reported registration technique using Fresnel zone plates and diffraction gratings is presented. The combination of these two techniques allows to define the configuration of a possible submicron large field X-ray exposure system that will be discussed.

Paper Details

Date Published: 7 November 1983
PDF: 7 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935111
Show Author Affiliations
B. Fay, Laboratoire de Recherches (France)

Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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