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Proceedings Paper

Status Of The Production Use Of Ion Implantation For IC Manufacture And Requirements For Competitive Application Of Focused Ion Beams
Author(s): Michael I. Current; Alfred Wagner
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Paper Abstract

An outline is given of the range of applications and limitations of "broad beam" implantation techniques for LSI and VLSI device fabrication. Some of these limitations include dose uniformity and accuracy, resist stability and erosion, wafer heating effects during implantation, surface contamination and charging effects. The impact of these and other issues on the fabrication of fine feature (less than 0.5 micron) devices, including a comparison of the application of focused ion beams for direct implantation is discussed.

Paper Details

Date Published: 7 November 1983
PDF: 15 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935109
Show Author Affiliations
Michael I. Current, Trilogy Systems Co. (United States)
Alfred Wagner, Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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