Proceedings Paper
Scanning Ion Beam Lithography For Sub-Micron Structure Fabrication| Format | Member Price | Non-Member Price |
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Paper Abstract
A scanning ion beam lithography instrument for the fabrication of sub-micron structures has been constructed and evaluated. It employs a tetrode gun, which accelerates the ions to the full beam voltage, and an einzel lens objective. Both gallium and gold-silicon liquid-metal sources have been used for resist exposure, and gallium sources have been used for direct selective ion implantation and for micromachining.
Paper Details
Date Published: 7 November 1983
PDF: 8 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935104
Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)
PDF: 8 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935104
Show Author Affiliations
J. R. A. Cleaver, Cambridge University (England)
P. J. Heard, Cambridge University (England)
P. J. Heard, Cambridge University (England)
H. Ahmed, Cambridge University (England)
Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)
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