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Proceedings Paper

X-Ray Lithography On Beam Line III-IV (3°) At SSRL
Author(s): R. Tatchyn; I. Lindau; Y. G. Su; R. Gutcheck; J. Muray; P. L. Csonka
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Paper Abstract

In recent months at SSRL, we have tested the feasibility of in vacuo x-ray lithographic studies using synchrotron radiation by exposing the resists PMMA and FBM-l20 to the white-light radiation in Beam Line (3°) during parasitic operation. Frequency selection was performed with Al and Ti filters, and the results of the experiment and their implications are presented in this report. A brief discussion of the advantages of synchrotron radiation for high-resolution x-ray microlithography research is also presented.

Paper Details

Date Published: 7 November 1983
PDF: 6 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935102
Show Author Affiliations
R. Tatchyn, Stanford University (United States)
I. Lindau, Stanford University (United States)
Y. G. Su, University of Science and Technology (PRC)
R. Gutcheck, Stanford Research Institute (United States)
J. Muray, Stanford Research Institute (United States)
P. L. Csonka, University of Oregon (United States)

Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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