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Proceedings Paper

Accurate Mark Position Detection In High Voltage Electron Beam Lithography
Author(s): Y. Kato; T. Takigawa; M. Yoshimi; K. Kawabuchi; K. Kirita
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Paper Abstract

A comparison was made between theoretical mark position detection errors at 50 kV acceleration voltage and those at 20 kV, by analyzing mark signal wave-forms obtained through experiment and Monte Carlo simulation. The increase in acceleration voltage results in smaller detection error, mainly due to higher detector sensitivity and higher electron gun beam brightness. It is useful to coat a mark with high backscattered electron coefficient material, for the further detection error reduction. The acceleration voltage and mark shape (convex or concave) effects were also investigated for marks covered with the overlayer materials, such as multi-layer resist etc. As a result, it was found that a convex mark is satisfactorily detected with high voltage electron beam, even if it is covered with multilayer resist over a thick aluminum or silicon dioxide film.

Paper Details

Date Published: 7 November 1983
PDF: 8 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935095
Show Author Affiliations
Y. Kato, Toshiba Corporation (Japan)
T. Takigawa, Toshiba Corporation (Japan)
M. Yoshimi, Toshiba Corporation (Japan)
K. Kawabuchi, Toshiba Corporation (Japan)
K. Kirita, Toshiba Corporation (Japan)

Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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