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Proceedings Paper

Submicron Optical Lithography Using Inorganic Resists
Author(s): J. M. Lavine; S. A. Lis; J. I. Masters
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Paper Abstract

The one-dimensional light intensity distributions for 10X, NA = 0.28 and 0.35 lenses with coherence of S = 0.7 at 436nm have been calculated using SAMPLE for linewidths from 2.0 to 0.4 microns. From these data, we obtain the optical contrast with varying defocus and the intensity of the light at the line edge for isolated lines, isolated spaces and equal lines and spaces. These data suggest that the presently available optical capability outstrips the capability of polymeric resist systems. It is argued that the high-gamma chalcogenide systems can better utilize this optical capability to extend lithography into the submicron regime. Some of the other advantages of the chalcogenides are the elimination of the standing wave effect, broad spectral sensitivity and the possibility of all dry processing. A simple physical model of the Ag-photodoping mechanism, useful in dealing with some of the experimental observeables, is also presented.

Paper Details

Date Published: 7 November 1983
PDF: 9 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935092
Show Author Affiliations
J. M. Lavine, GCA Corporation (United States)
S. A. Lis, GCA Corporation (United States)
J. I. Masters, GCA Corporation (United States)

Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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