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Proceedings Paper

Characterization Of Interfaces In Ion Implanted And Processed Semiconductor
Author(s): D. K. Sadana
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Paper Abstract

This review covers the two key aspects of ion implantation: 1. damage production in a crystalline Si substrate and eventual amorphization of damaged region of the substrate and, 2. the recrystallization of the damaged layers. The latter has been divided into two separate topics; recrystallization behavior of damage in bare-implantated Si substrates and in through-oxide implanted Si substrates. Pictorial examples (TEM micrographs) of recrystallization behavior of various types of damage structure on furnace, laser and rapid thermal annealing are given in the text. The effect of secondary defects on redistribution of impurities has been illustrated. The electrical properties of the implanted region has been explained by considering damage-impurity interactions.

Paper Details

Date Published: 8 November 1983
PDF: 21 pages
Proc. SPIE 0387, Technology of Stratified Media, (8 November 1983); doi: 10.1117/12.934989
Show Author Affiliations
D. K. Sadana, Microelectronics Center of North Carolina and North Carolina State University (United States)

Published in SPIE Proceedings Vol. 0387:
Technology of Stratified Media
Roy F. Potter, Editor(s)

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