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Proceedings Paper

Semiconductor Heterojunction Devices
Author(s): L. R. Tomasetta
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Paper Abstract

This paper reviews the rationale for the use of heterojunctions in devices. Through the use of specific examples, the physical properties of this powerful technique are demonstrated. Comparisons of common epitaxial growth techniques suitable for heterojunction growths are given.

Paper Details

Date Published: 8 November 1983
PDF: 8 pages
Proc. SPIE 0387, Technology of Stratified Media, (8 November 1983); doi: 10.1117/12.934978
Show Author Affiliations
L. R. Tomasetta, Rockwell International (United States)

Published in SPIE Proceedings Vol. 0387:
Technology of Stratified Media
Roy F. Potter, Editor(s)

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