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Proceedings Paper

High-Performance Thin Film Transistors In CO[sub]2[/sub] Laser Crystallized Silicon On Quartz
Author(s): A. Chiang; W. P. Meuli; N. M. Johnson; M. H. Zarzycki
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Paper Abstract

High performance thin-film transistors (TFTs) have been fabricated in single-crystal silicon thin films on fused quartz substrates. The single-crystal islands for device fabrication are produced from patterned and encapsulated polysilicon films crystallized with a scanning CO2 laser. We have previously reported on metal-gate n-channel enhancement mode TFTs with channel mobilities > 900 cm2/V-s, leakage currents < 10 pA, and voltage thresholds < 1 V. In this paper, we will report for the first time our work on depletion mode as well as enhancement mode devices fabricated with a polysilicon-gate NMOS process. These devices have channel lengths of 6 to 20 µm. Channel mobilities of > 900 cm2/V-s are again indicative of single-crystal islands. Leakage currents of ~ 1 pA are achieved by back channel ion implantation. Voltage thresholds vary by < 0.3 V, and the yield for working devices is 98%. The results anticipate the achievement of a high-performance integrated SOI circuit technology.

Paper Details

Date Published: 9 August 1983
PDF: 6 pages
Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934957
Show Author Affiliations
A. Chiang, Xerox Palo Alto Research Centers (United States)
W. P. Meuli, Xerox Palo Alto Research Centers (United States)
N. M. Johnson, Xerox Palo Alto Research Centers (United States)
M. H. Zarzycki, Xerox Palo Alto Research Centers (United States)

Published in SPIE Proceedings Vol. 0385:
Laser Processing of Semiconductor Devices
Charles C. Tang, Editor(s)

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