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Proceedings Paper

Circuit Simulation Of Three-Dimensional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Device Structures In Beam-Recrystallized Polysilicon Films
Author(s): James F. Gibbons; Martin D. Giles; Kwing F. Lee; James T. Walker
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Paper Abstract

Some new device structures are proposed in which a set of folding and rotation operations is used to transform planar MOSFET device configurations into three-dimensional structures in beam-recrystallized polysilicon films. Some of the resulting devices use both sides of a recrystallized film for MOSFET device fabrication, while others use a single gate to modulate the surfaces of two separate films simultaneously. Preliminary circuit simulations have been performed to study the speed and yield possibilities of several basic-circuits.

Paper Details

Date Published: 9 August 1983
PDF: 4 pages
Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934950
Show Author Affiliations
James F. Gibbons, Stanford University (United States)
Martin D. Giles, Stanford University (United States)
Kwing F. Lee, Stanford University (United States)
James T. Walker, Stanford University (United States)


Published in SPIE Proceedings Vol. 0385:
Laser Processing of Semiconductor Devices
Charles C. Tang, Editor(s)

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