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Proceedings Paper

Impurity Energy Levels For Se And Zn In Ga[sub](1 -x)[/sub]Al[sub]x[/sub]As
Author(s): Jane J. Yang; William I. Simpson; Lavada A. Moudy
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Paper Abstract

Electrical properties and the impurity energy levels in Se-doped n-Ga(l-x)AlxAs (0≤x≤0.82) and Zn-doped p-Ga1-xAlxAs (0≤x≤1) prepared by metalorganic chemical vapor deposition have been investigated. The van der Pauw technique was used to measure the electrical properties of Ga(l-x)AlxAs. The resistivity and carrier concentrations of Ga(1-x)AlxAs were found to be strongly affected by the impurity energy levels for Se and Zn. Tne donor energy levels, ED, of Se in Ga(1-x)A1xAs was found to take the form of an inverted V with a maximum at the direct-indirect band crossover while the acceptor energy levels, EA, of Zn was found to increase with increasing A1 mole fraction.

Paper Details

Date Published: 15 September 1982
PDF: 6 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934286
Show Author Affiliations
Jane J. Yang, Rockwell International (United States)
William I. Simpson, Rockwell International (United States)
Lavada A. Moudy, Rockwell International (United States)

Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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