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Proceedings Paper

Organometallic Vapor Phase Epitaxy (OMVPE) Growth Of Al[sub]x[/sub]Ga[sub]1-x[/sub]As
Author(s): Gerald B. Stringfellow
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Paper Abstract

The OMVPE growth technique has only recently been established to yield device quality III-V compounds and alloys. The alloy receiving the most attention has been AlxGa1-xAs because of its application to lattice matched heterostructure devices such as solar cells and lasers, including multiquantum-well structures. This paper briefly reviews the development of OMVPE for the growth of AlxGa1-xAs, including a discussion of problems which were solved to reach the current state-of-the-art. The fundamental aspects of OMVPE growth are discussed, especially emphasizing fundamental advantages and disadvantages of OMVPE relative to other growth techniques such as LPE, MBE, and halide VPE. Other less fundamental aspects of OMVPE relating to purity, uniformity, surface morphology, and flexibility are also discussed. The current status of OMVPE AlxGa1-xAs material and devices is summarized.

Paper Details

Date Published: 15 September 1982
PDF: 7 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934278
Show Author Affiliations
Gerald B. Stringfellow, University of Utah (United States)

Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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