Proceedings Paper
Lead Sulfide-Silicon MOSFET Infrared Focal Plane Development| Format | Member Price | Non-Member Price |
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Paper Abstract
A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (>10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.
Paper Details
Date Published: 10 August 1983
PDF: 10 pages
Proc. SPIE 0350, Focal Plane Methodologies III, (10 August 1983); doi: 10.1117/12.933894
Published in SPIE Proceedings Vol. 0350:
Focal Plane Methodologies III
William S. Chan; John T. Hall, Editor(s)
PDF: 10 pages
Proc. SPIE 0350, Focal Plane Methodologies III, (10 August 1983); doi: 10.1117/12.933894
Show Author Affiliations
John R. Barrett, Itek Corporation (United States)
Murzban D. Jhabvala, Goddard Space Flight Center (United States)
Published in SPIE Proceedings Vol. 0350:
Focal Plane Methodologies III
William S. Chan; John T. Hall, Editor(s)
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