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Proceedings Paper

Proton Damage In Laser Diodes And Light-Emitting Diodes (LEDs)
Author(s): I. Arimura; C. E. Barnes
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Paper Abstract

The effects of low energy proton irradiations (< 1.5 MeV) on GaAs CUT and pulsed laser diodes (RCA C30130 and Laser Diode Lab LD-60) operated at room temperature are reported in this study. A strong energy dependence is observed from 200 keV to 1 MeV which is the result of the nonuniform damage produced by protons. One potential complication is proton energy attenuation by surface materials (metallization, contacts, leads). A strong dependence on diode orientation is also observed---1.5 MeV protons incident parallel to the junc-tion plane and normal to the laser emission facet produce anywhere from a factor of ~ 5 to 50 times more damage than when incident normal to the broqd, currentinjecting face of the laser diode. Proton fluences as low as 10 to 1012 p/cm2 produced significant degradation in laser output power.

Paper Details

Date Published: 23 July 1982
PDF: 5 pages
Proc. SPIE 0328, Laser and Laser Systems Reliability, (23 July 1982); doi: 10.1117/12.933889
Show Author Affiliations
I. Arimura, Boeing Aerospace Company (United States)
C. E. Barnes, Sandia National Laboratories (United States)


Published in SPIE Proceedings Vol. 0328:
Laser and Laser Systems Reliability
Gary A. Evans, Editor(s)

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