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Proceedings Paper

Radiation Effects On Semiconductor Optical Devices For Space Communications
Author(s): L. W. Aukerman; Y. Song; F. L. Vernon Jr.; G. A. Evans; J. Z. Wilcox
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Paper Abstract

A survey of the published literature on radiation effects in laser diodes and photodiodes as applied to space communications is presented. Laser diodes should be relatively hard to nuclear environments, especially if operated well above threshold, and should be quite hard to the natural environment. Photodiodes, on the other hand, may experience excess noise due to sustained ionization by Van Allen radiation, especially if this radia-tion is enhanced by a recent nuclear event. Avalanche photodiodes (APDs) are especially sensitive to sustained ionizing dose rate effects. Silicon p-i-n photodiodes are relatively insensitive to neutron damage in contrast to APDs which are considerably more vulnerable. Methods of improving the radiation tolerance of p-i-n photodiodes have been sucessfully implemented by employing double heterostructure junctions. Additional experimental work is needed for improved modeling of these devices.

Paper Details

Date Published: 23 July 1982
PDF: 10 pages
Proc. SPIE 0328, Laser and Laser Systems Reliability, (23 July 1982); doi: 10.1117/12.933886
Show Author Affiliations
L. W. Aukerman, The Aerospace Corporation (United States)
Y. Song, The Aerospace Corporation (United States)
F. L. Vernon Jr., The Aerospace Corporation (United States)
G. A. Evans, TRW Electronics and Defense (United States)
J. Z. Wilcox, TRW Electronics and Defense (United States)

Published in SPIE Proceedings Vol. 0328:
Laser and Laser Systems Reliability
Gary A. Evans, Editor(s)

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