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Proceedings Paper

Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) Structure
Author(s): Yoshihiro Miyamoto; Tohru Maekawa; Toshiro Yamamoto; Kunihiro Tanikawa; Hiroshi Takigawa; Reikichi Tsunoda; Toshio Kanno
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Paper Abstract

This paper describes a new method of surface potential measurement for MIS infrared focal plane arrays. The key feature of this method is a charge sensitive amplifier which detects the surface potential directly. The surface potential is subject to photo-generated charge carriers stored in a potential well as well as the gate voltage. Therefore, this measurement can be used for both electronic and optical characterization of an MIS infrared imager such as an infrared charge coupled device (IRCCD) or an infrared charge injection device (IRCCD). Mercury cadmium telluride (HgCdTe) IRCIDs with 3 x 5 pixels were evaluated using this technique. The measurement was controlled by HP System 35 and proved more accurate, informative, and speedy than the conventional capacitance-voltage (C-V) measurement.

Paper Details

Date Published: 28 December 1982
PDF: 10 pages
Proc. SPIE 0341, Real-Time Signal Processing V, (28 December 1982); doi: 10.1117/12.933717
Show Author Affiliations
Yoshihiro Miyamoto, Fujitsu Laboratories Ltd. (Japan)
Tohru Maekawa, Fujitsu Laboratories Ltd. (Japan)
Toshiro Yamamoto, Fujitsu Laboratories Ltd. (Japan)
Kunihiro Tanikawa, Fujitsu Laboratories Ltd. (Japan)
Hiroshi Takigawa, Fujitsu Laboratories Ltd. (Japan)
Reikichi Tsunoda, Japan Defence Agency (Japan)
Toshio Kanno, Japan Defence Agency (Japan)

Published in SPIE Proceedings Vol. 0341:
Real-Time Signal Processing V
Joel Trimble, Editor(s)

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