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Proceedings Paper

New Technique For Inspecting Charge-Coupled Device (CCD) Wafers For Defects
Author(s): Toshio Konishi; Morio Misono; Toshio Kato
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Paper Abstract

A new technique for inspecting extremely hign density CCU wafers (292 x 492 picture elements) for surface defects is proposed. The differential operator and the thresholding are employed to extract pattern boundary with a high. S/N ratio, after which a set of the pixels in a pattern area compared with the corresponding set of pixels in the adjacent repeating pattern. The defect is identified as the number of unmatching pixels by the above processing, adding the reduction technique for associated noise of the boundary. The practical system including the hardware logic of those processing ones it possible to inspect a 3-inch CCD wafer in 80 minutes.

Paper Details

Date Published: 22 November 1982
PDF: 5 pages
Proc. SPIE 0336, Robot Vision, (22 November 1982); doi: 10.1117/12.933620
Show Author Affiliations
Toshio Konishi, Sony Corporation (Japan)
Morio Misono, Sony Corporation (Japan)
Toshio Kato, Sony Corporation (Japan)

Published in SPIE Proceedings Vol. 0336:
Robot Vision
Azriel Rosenfeld, Editor(s)

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