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Proceedings Paper

1 to 2 µm III-V Compound Detectors
Author(s): Gregory H. Olsen
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Paper Abstract

Detector structures for the 1-2 µm spectral region are briefly reviewed. Results from VPE InGaAs photodetectors are then described including 100 µm and 500 µm diameter devices for 1.0-1.7 µm, and thin cap 100 µm diameter devices for 0.5-1.7 µm response. High quantum efficiency, low leakage current and high reliability have been observed. Heterostructures for 2-3 µm response are also described.

Paper Details

Date Published: 31 March 1983
PDF: 6 pages
Proc. SPIE 0335, Advanced Laser Technology and Applications, (31 March 1983); doi: 10.1117/12.933598
Show Author Affiliations
Gregory H. Olsen, RCA Laboratories/David Sarnoff Research Center (United States)

Published in SPIE Proceedings Vol. 0335:
Advanced Laser Technology and Applications
Leon Esterowitz, Editor(s)

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