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Proceedings Paper

New High Speed Positive Resist For Wafer Steppers
Author(s): R. F. Leonard; W. F. Cordes III
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Paper Abstract

At the Semiconductor Microlithography VI Conference, March 30-31, 1981 a new high speed positive resist, WX118 was described with particular reference to its "properties" (i.e.; 1.) absorption spectrum, 2.) film thickness vs. spin speed, and 3.) optimum softbake and hardbake conditions), and was compared to Hunt's HPR-204 in "conventional" UV exposure, using both contact and 1:1 projection systems. Recent studies with WX-118 resist imaged with a GCA 4800 DSW Wafer Stepper have shown, with different developer systems (i.e., LSI Developer, MIF Developer, WX-ll6 Developer, etc.) structures as small as 0.4 microns wide with near vertical sidewalls. SEMs are presented to demonstrate the superior resolution capabilities of WX-118 resist Plus high photospeed in step and repeat systems. Data are also presented on the modification of WX-118 image profiles from vertical sidewalls to undercut sidewalls. Preliminary information is supplied on the increase in WX-118 softening point by the employment of a post-development UV exposure.

Paper Details

Date Published: 13 September 1982
PDF: 8 pages
Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); doi: 10.1117/12.933576
Show Author Affiliations
R. F. Leonard, Philip A. Hunt Chemical Corporation (United States)
W. F. Cordes III, Philip A. Hunt Chemical Corporation (United States)

Published in SPIE Proceedings Vol. 0334:
Optical Microlithography I: Technology for the Mid-1980s
Harry L. Stover, Editor(s)

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