Share Email Print

Proceedings Paper

Ion-Channelling Effects In Scanning Microscopy And Ion Beam Writing With A 60 keV Ga+ Probe
Author(s): R. Levi-Setti; T. R. Fox; K. Lam
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We describe the operation and functions of a scanning ion microscope. This has been shown capable of detecting ion-channelling phenomena in crystalline materials through the observation of crystallographic contrast in images obtained with the secondary electron and secondary ion signal. The instrument also provides on-line quantitative information on surface amorphization and on channelling effects in direct ion beam writing.

Paper Details

Date Published: 30 June 1982
PDF: 5 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933428
Show Author Affiliations
R. Levi-Setti, The University of Chicago (United States)
T. R. Fox, The University of Chicago (United States)
K. Lam, The University of Chicago (United States)

Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?