Proceedings Paper
Ion-Channelling Effects In Scanning Microscopy And Ion Beam Writing With A 60 keV Ga+ Probe| Format | Member Price | Non-Member Price |
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Paper Abstract
We describe the operation and functions of a scanning ion microscope. This has been shown capable of detecting ion-channelling phenomena in crystalline materials through the observation of crystallographic contrast in images obtained with the secondary electron and secondary ion signal. The instrument also provides on-line quantitative information on surface amorphization and on channelling effects in direct ion beam writing.
Paper Details
Date Published: 30 June 1982
PDF: 5 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933428
Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)
PDF: 5 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933428
Show Author Affiliations
R. Levi-Setti, The University of Chicago (United States)
T. R. Fox, The University of Chicago (United States)
T. R. Fox, The University of Chicago (United States)
K. Lam, The University of Chicago (United States)
Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)
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