Proceedings Paper
Resist Possibilities And Limitations In Ion Beam Lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
A broad range of materials and processing techniques amenable to producing resist systems for ion beam lithography are discussed. The effect of random fluctuations in exposure dose on feature size for a gaussian beam of constant shape is calculated. The results of Monte Carlo simulations of exposures of PMMA on silicon by 50 KeV H2+, 100 KeV and and 150 KeV Li+ ions are presented and it is shown that feature resolution is fundamentally limited by the physical processes through which energy is deposited.
Paper Details
Date Published: 30 June 1982
PDF: 10 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933426
Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)
PDF: 10 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933426
Show Author Affiliations
A. Macrander, Bell Laboratories (United States)
D. Barr, Bell Laboratories (United States)
D. Barr, Bell Laboratories (United States)
A. Wagner, Bell Laboratories (United States)
Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)
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