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Proceedings Paper

X-Ray Lithography: Technology For The 1980s
Author(s): C. R. Fencil; G. P. Hughes
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Paper Abstract

Advances in X-ray lithography technology are occurring at a promising rate. Impressive progress has been made in the development of high-intensity sources, mask membrane and patterning technology, precision mask-to-wafer alignment, and faster, high-resolution X-ray resists. The concept of using this inherently low defect lithographic technique for manufacturing submicron integrated circuits by 1985 and beyond, is realistic. Current X-ray Lithographic research systems replicate integrated circuit patterns on a full wafer with a single exposure, but step-and-repeat exposure systems are being developed for more advanced submicron applications. Both system types are discussed, and performance trade analyses are presented to show the relative merits of each approach.

Paper Details

Date Published: 30 June 1982
PDF: 11 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933419
Show Author Affiliations
C. R. Fencil, The Perkin-Elmer Corporation (United States)
G. P. Hughes, The Perkin-Elmer Corporation (United States)

Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)

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