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Proceedings Paper

Practical Deep Ultraviolet - The Multilayer Approach
Author(s): Mary L. Long
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Paper Abstract

Wafer imaging technology has changed significantly in the past few years, responding to the demands of LSI and VLSI circuitry. The powerful driving force of economics indicates that the LSI trend will continue with reduced line widths and greater complexity to achieve a higher level of functions in reduced area. Even with signigicant cost increases due to advanced equipment and zero defect mask or wafer fabrication, increased integration is cost effective and progression toward sub-micron design rules is expected to continue. 1 The major question is how sub-micron technology will be implemented into the production environment.

Paper Details

Date Published: 30 June 1982
PDF: 5 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933412
Show Author Affiliations
Mary L. Long, KTI Chemicals, Inc. (United States)

Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)

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