Proceedings Paper
Narrow Diffused Stripe GaAs/GaAlAs Lasers For High Speed Integrated Optical Transmitters| Format | Member Price | Non-Member Price |
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Paper Abstract
Deep Zn diffused stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition for fiber optic transmitter applications are reported. Stripe widths of 2, 4, and 8 pm are examined in terms of laser threshold currents and far-field radiation patterns. For lasers with a 4 pm stripe, threshold currents as low as 40 mA, a characteristic temperature as large as 170°C, and external differential quantum efficiencies as high as 80-90% are obtained. Single mode operation of these lasers is observed. Preliminary results on the device uniformity and high-speed modulation characteristics are includded.
Paper Details
Date Published: 27 August 1982
PDF: 5 pages
Proc. SPIE 0321, Integrated Optics II, (27 August 1982); doi: 10.1117/12.933230
Published in SPIE Proceedings Vol. 0321:
Integrated Optics II
Dennis G. Hall, Editor(s)
PDF: 5 pages
Proc. SPIE 0321, Integrated Optics II, (27 August 1982); doi: 10.1117/12.933230
Show Author Affiliations
C. S. Hong, Rockwell International/MRDC (United States)
J. J. Coleman, Rockwell International/MRDC (United States)
P. D. Dapkus, Rockwell International/MRDC (United States)
J. J. Coleman, Rockwell International/MRDC (United States)
P. D. Dapkus, Rockwell International/MRDC (United States)
D. E. Thompson, Rockwell International/MRDC (United States)
M. E. Kim, Rockwell International/MRDC (United States)
M. E. Kim, Rockwell International/MRDC (United States)
Published in SPIE Proceedings Vol. 0321:
Integrated Optics II
Dennis G. Hall, Editor(s)
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