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Proceedings Paper

Picosecond Laser Damage Mechanisms At Semiconductor Surfaces
Author(s): M. F. Becker; R. M. Walser; Y. K. Jhee; D. Y. Sheng
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Paper Abstract

We treat picosecond laser induced damage as a non-equilibrium phase transition and propose a new damage mechanism. This model which includes energy transfer by resonant surface plasmons on small electron density droplets is shown to be consistent with existing experimental data. New experimental data has been taken which demonstrates the nucleation and growth aspects of the laser damage process.

Paper Details

Date Published: 23 April 1982
PDF: 7 pages
Proc. SPIE 0322, Picosecond Lasers and Applications, (23 April 1982); doi: 10.1117/12.933214
Show Author Affiliations
M. F. Becker, University of Texas (United States)
R. M. Walser, University of Texas (United States)
Y. K. Jhee, University of Texas (United States)
D. Y. Sheng, University of Texas (United States)


Published in SPIE Proceedings Vol. 0322:
Picosecond Lasers and Applications
Lawrence S. Goldberg, Editor(s)

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