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Proceedings Paper

Impact Of Molecular Beam Epitaxy On Millimeter Wave And Optical Systems
Author(s): George D. O'Clock Jr.; L.Peter Erickson
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Paper Abstract

Molecular beam epitaxy (MBE) is an ultrahigh vacuum evaporation process for growing epitaxial films on a wide variety of substrates. The basic constituents of the films are thermally evaporated and directed toward a heated substrate. The evaporated materials are deposited on the heated substrate surface forming a film. MBE offers the ability to maintain a high level of precise control over material composition and film thickness required for semiconductor devices utilized in microwave, millimeter wave and optical system applications.

Paper Details

Date Published: 2 August 1982
PDF: 8 pages
Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); doi: 10.1117/12.933113
Show Author Affiliations
George D. O'Clock Jr., The Perkin-Elmer Corporation (United States)
L.Peter Erickson, The Perkin-Elmer Corporation (United States)

Published in SPIE Proceedings Vol. 0317:
Integrated Optics and Millimeter and Microwave Integrated Circuits
Bob D. Guenther; William Pittman, Editor(s)

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