Because of the high degree of versatility and controllability possible in growing III-V compound semiconductor epitaxial layers having precise thickness, compositional and doping profiles by molecular beam epitaxy (MBE), a new generation of electronic and photonic devices are conceived and demonstrated. Such versatility and controllability stem simply from the ability to independently control and vary accurately and conveniently the flux density of each individual constituent source elements during the epitaxial process. In this paper, some illustrative examples of new devices in the photonic area and the device physics involved make possible because of these unique capabilities of MBE will be reviewed.

Date Published: 2 August 1982
PDF: 8 pages
Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); doi: 10.1117/12.933085

Published in SPIE Proceedings Vol. 0317:
Integrated Optics and Millimeter and Microwave Integrated Circuits
Bob D. Guenther; William Pittman, Editor(s)