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Proceedings Paper

Comparison Of Electron Beam And Optical Projection Lithography In The Region Of One Micrometer
Author(s): T. S. Chang; D. F. Kyser; C. H. Ting
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Paper Abstract

The purpose of this paper is to discuss the practical trade-offs of electron beam direct-write and optical projection techniques in terms of resolution and linewidth control for device geometries in the one micrometer feature region. Overlay, field size, throughput and other economic issues will not be addressed. It is generally understood that the overlay accuracy of E-beam direct-write is the bestl among the various lithographic approaches.

Paper Details

Date Published: 28 July 1981
PDF: 5 pages
Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); doi: 10.1117/12.931881
Show Author Affiliations
T. S. Chang, International Business Machines Corporation (United States)
D. F. Kyser, International Business Machines Corporation (United States)
C. H. Ting, International Business Machines Corporation (United States)


Published in SPIE Proceedings Vol. 0275:
Semiconductor Microlithography VI
James W. Dey, Editor(s)

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