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Proceedings Paper

Quantitative Sub-Micrometer Linewidth Determination Using Electron Microscopy
Author(s): Stephen Jensen; Gary Hembree; Jay Marchiando; Dennis Swyt
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Paper Abstract

Quantitative determination of sub-micrometer linewidths in semiconductor devices and masks is demonstrated utilizing an approach employing complementary experimental measurements and theoretical modeling. Experimental measurements are performed utilizing the Microlength Calibrating Electron Probe (MCEP), a new facility at the National Bureau of Standards consisting of a scanning electron microscope modified to incorporate a scanning stage and laser-interferometer position measurement system. Automated data acquisition and analysis for the MCEP are achieved through interfacing to a laboratory minicomputer. Theoretical modeling based on Monte Carlo calculations provides a basis for selection of the position in the experimentally measured backscatter electron intensity profile that corresponds to the actual material line edge. A measurement on a photomask is shown which illustrates the utility of the MCEP facility and the Monte Carlo modeling calculations for accurate measurement of sub-micrometer linewidths.

Paper Details

Date Published: 28 July 1981
PDF: 10 pages
Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); doi: 10.1117/12.931879
Show Author Affiliations
Stephen Jensen, National Bureau of Standards (United States)
Gary Hembree, National Bureau of Standards (United States)
Jay Marchiando, National Bureau of Standards (United States)
Dennis Swyt, National Bureau of Standards (United States)

Published in SPIE Proceedings Vol. 0275:
Semiconductor Microlithography VI
James W. Dey, Editor(s)

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