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Proceedings Paper

Pulsed Plasma Source For X-Ray Lithography
Author(s): S. M. Matthews; R. Stringfield; I. Roth; R. Cooper; N. P. Economou; D. C. Flanders
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Paper Abstract

A compact, efficient, high-brightness pulsed plasma x-ray source has been demonstrated. The source has a conversion efficiency, from electrical input to usable x-ray energy, of greater than one percent. X rays are emitted from a cylindrical volume approximately 1 mm in diameter and 10-mm long. Various wavelengths can be obtained by the choice of appro-priate plasma materials. Submicrometer features have been replicated using x-rays in the 12 A region to expose a wafer, coated with FBM resist (~ 50X PMMA sensitivity), through a polyimide/gold x-ray mask. The exposure was made through a 25-μm-thick beryllium filter with the wafer 30 cm from the source. Twenty x-ray pulses were required to fully expose the resist. For this experiment the available electrical pulse power supply was limited to one pulse every few minutes. However, the x-ray source itself is capable of much faster pulse rates, and electrical driver technology to power the x-ray source at one or more pulses per second is within present state-of-the-art.

Paper Details

Date Published: 28 July 1981
PDF: 3 pages
Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); doi: 10.1117/12.931873
Show Author Affiliations
S. M. Matthews, Physics International (United States)
R. Stringfield, Physics International (United States)
I. Roth, Physics International (United States)
R. Cooper, Physics International (United States)
N. P. Economou, Massachusetts Institute of Technology (United States)
D. C. Flanders, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0275:
Semiconductor Microlithography VI
James W. Dey, Editor(s)

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