Proceedings Paper
Single And Dual Wavelength Exposure Of Photoresist| Format | Member Price | Non-Member Price |
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Paper Abstract
The dependency of photoresist line width control on the photoresist thickness variations has been quantified for three different microelectronics wafer surfaces. The exposures were made with a step-and-repeat projection camera which is designed to image with both the Hg-g and Hg-h spectral lines to the wafer surface. A filter was placed in the light path so that resist exposures with only the Hg-g line could also be studied. The effect of camera defocus and nominal photoresist thicknesses of 800 and 1600 nm was included. The expected result of the line width variation periodicity being equal to 1/2 of the exposing wavelength was found. However, also found is an unexpected periodicity which could be described as λR/6
Paper Details
Date Published: 28 July 1981
PDF: 6 pages
Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); doi: 10.1117/12.931868
Published in SPIE Proceedings Vol. 0275:
Semiconductor Microlithography VI
James W. Dey, Editor(s)
PDF: 6 pages
Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); doi: 10.1117/12.931868
Show Author Affiliations
J. LaRue, IBM General Technology Division (United States)
C. Ting, IBM Research Division (United States)
Published in SPIE Proceedings Vol. 0275:
Semiconductor Microlithography VI
James W. Dey, Editor(s)
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