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Proceedings Paper

Reactive Etching Of Semiconductor Surfaces By Laser-Generated Free Radicals
Author(s): David Harradine; F. Read McFeely; Bobbi Roop; Jeffrey I. Steinfeld; Dean Denison; Larry Hartsough; John R. Hollahan
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Paper Abstract

Reactive etching at silicon and silicon-oxide surfaces is customarily carried out in a fluorocarbon plasma. Under such conditions, a large variety of reactive species is generated, making it extremely difficult to elucidate details of the etching mechanism; in addition, the charged species present in the plasma frequently produce undesirable radiation damage in the finished devices. We have found that dissociation of the parent fluorocarbons by multiple-infrared-photon excitation produces reactive neutral fragments which are capable of etching these surfaces. Etch gases such as CF3Br, CF2HC1, CF300CF3, and SF, may be used with poly-Si, Si02, Si3 Nd' and other substrates; SEM, ESCA, and Auger diagnostics are employed to characterize the reactions occurring at the surface. From these experiments we hope to develop a quantitative model for the reactive etching process. Possible commercial advantages of the laser-etching technique include reduction or elimination of radiation damage, increased etching rates, and improved Si02/Si specificity.

Paper Details

Date Published: 15 September 1981
PDF: 9 pages
Proc. SPIE 0270, High Power Lasers and Applications, (15 September 1981); doi: 10.1117/12.931735
Show Author Affiliations
David Harradine, Massachusetts Institute of Technology (United States)
F. Read McFeely, Massachusetts Institute of Technology (United States)
Bobbi Roop, Massachusetts Institute of Technology (United States)
Jeffrey I. Steinfeld, Massachusetts Institute of Technology (United States)
Dean Denison, The Perkin-Elmer Corporation (United States)
Larry Hartsough, The Perkin-Elmer Corporation (United States)
John R. Hollahan, Consultant (United States)

Published in SPIE Proceedings Vol. 0270:
High Power Lasers and Applications
Charles C. Tang, Editor(s)

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