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Proceedings Paper

HEL (High-Energy Laser) Silicon Component Technology
Author(s): Terry V. Roszhart; Herman Vogel; Dave Shemwell; Matthew Miller; Robert McIntosh
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Paper Abstract

Single crystal silicon exhibits thermal, mechanical, optical, and fabrication properties appropriate for the requirements of HEL (High-Energy Laser), component technology. As a material, single crystal silicon offers low thermal expansion, low density, high thermal conductivity and high heat capacity which yield a thermal/mechanical high power deformation response that is superior to Mo, Be, WC and other mirror candidate materials. In addition, silicon's crystal structure can be used to produce periodic, sharply defined geometrical shapes in certain crystallographic planes through Preferential Chemical Etching (PCE). By properly combining this action with specific photoresist exposure and development techniques, coolant channels and other critical structures related to HEL component fabrication may be produced accurately. Silicon also can be polished to a low microroughness, yielding surfaces with low scatter and high damage resistance. These advantages apply to both CW and pulsed modes of operation, providing the potential for high quality operation at short as well as long wavelengths.

Paper Details

Date Published: 15 September 1981
PDF: 6 pages
Proc. SPIE 0270, High Power Lasers and Applications, (15 September 1981); doi: 10.1117/12.931732
Show Author Affiliations
Terry V. Roszhart, The Perkin-Elmer Corporation (United States)
Herman Vogel, The Perkin-Elmer Corporation (United States)
Dave Shemwell, The Perkin-Elmer Corporation (United States)
Matthew Miller, The Perkin-Elmer Corporation (United States)
Robert McIntosh, The Perkin-Elmer Corporation (United States)

Published in SPIE Proceedings Vol. 0270:
High Power Lasers and Applications
Charles C. Tang, Editor(s)

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