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Proceedings Paper

Pulsed and continuous wave solid phase laser annealing of electrodeposited CuInSe2 thin films
Author(s): Ashish Bhatia; Helen Meadows; Alexandre Crossay; Phillip J. Dale; Michael A. Scarpulla
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Paper Abstract

Cu(In,Ga)Se2 (CIGS) thin film photovoltaic absorber layers are primarily synthesized by vacuum based techniques at industrial scale. In this work, we investigate non-vacuum film synthesis by electrochemical deposition coupled with pulsed laser annealing (PLA) and or continuous wave laser annealing (CWLA) using 1064 nm laser. PLA results indicate that at high fluence (≥100 mJ/cm2) CuInSe2 films melt and dewet on both Mo and Cu substrates. In the submelt PLA regime (≤70 mJ/cm2) no change in XRD results is recorded. However CWLA at 50 W/cm2 for up to 45 s does not result in melting or dewetting of the film. XRD and Raman data indicate more than 80% reduction in full width at half maximum (FWHM) in their respective main peaks for annealing time of 15 s or more. No other secondary phases are observed in XRD or Raman spectrum. These results might help us in setting up the foundation for processing CIGS through an entirely non-vacuum process.

Paper Details

Date Published: 12 October 2012
PDF: 9 pages
Proc. SPIE 8473, Laser Material Processing for Solar Energy, 84730F (12 October 2012); doi: 10.1117/12.930147
Show Author Affiliations
Ashish Bhatia, The Univ. of Utah (United States)
Helen Meadows, Univ. du Luxembourg (Luxembourg)
Alexandre Crossay, Univ. du Luxembourg (Luxembourg)
Phillip J. Dale, Univ. du Luxembourg (Luxembourg)
Michael A. Scarpulla, The Univ. of Utah (United States)

Published in SPIE Proceedings Vol. 8473:
Laser Material Processing for Solar Energy
Edward W. Reutzel, Editor(s)

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