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Proceedings Paper

The effectiveness of metal oxide nanocrystal-enhanced polymers as hardmasks for photolithography
Author(s): Mary Ann Hockey; Qin Lin; Eric Calderas
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Paper Abstract

Utilizing thin photoresist imaging layers for successful pattern transfer has gained acceptance as a lithography process of record, primarily due to the incorporation of silicon-containing hardmask (HM) layers for added etching resistance. Our work includes understanding the impact of incorporating metal oxide (HfO2, ZrO2, ZnO, and TiZrO2) nanocrystal additives supplied by Pixelligent Technologies into polymer-based spin-on HM coatings. The goal was to quantify etch selectivity and analyze lithography process latitudes with the addition of nanocrystals into polymers. Results indicate such additions provide substantial process window advantages with improvements in the depth of focus (DOF) and overall pattern collapse margins.

Paper Details

Date Published: 15 October 2012
PDF: 10 pages
Proc. SPIE 8456, Nanophotonic Materials IX, 84560Q (15 October 2012); doi: 10.1117/12.928964
Show Author Affiliations
Mary Ann Hockey, Brewer Science, Inc. (United States)
Qin Lin, Brewer Science, Inc. (United States)
Eric Calderas, Brewer Science, Inc. (United States)

Published in SPIE Proceedings Vol. 8456:
Nanophotonic Materials IX
Stefano Cabrini; Taleb Mokari, Editor(s)

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