Use of selective emitters is an important step in increasing the efficiency of commercial crystalline Si solar cells, but costs must be kept under control. Laser doping allows selective doping of precisely defined regions without the need for process- and labor-intensive photolithography steps while maintaining or improving cell quality. Laser processing parameters must be investigated to optimize doping and minimize defect generation and contact resistance to realize optimal photovoltaic performance. Lasers are available in a wide range of wavelengths, pulse durations, fluences, and energy distributions. Processing parameters must be selected with both performance and industrial feasibility in mind.

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493H (15 October 2012); doi: 10.1117/12.927446

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)