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Proceedings Paper

Fabrication and Characterization of High Mobility Spin-Coated Zinc Oxide Thin Film Transistors
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Paper Abstract

A ZnO based thin film transistor (TFT) with bottom-gate configuration and SiO2 as insulating layer has been fabricated and characterized. The ZnO thin film was prepared by spin coating the sol-gel solution on the p-type Si wafers. The optical and structural properties of ZnO films were investigated using UV measurements and scanning electron microscope (SEM). The result of UV-visible study confirms that the films have a good absorbance in UV region and relatively low absorbance in the visible region. The TFT exhibited an off-current of 2.5×10-7 A. The values of field effect channel mobility and on/off current ratio extracted for the device, measured 11 cm2/V.s and ~102 respectively. The value of threshold voltage was found to be 1.3 V.

Paper Details

Date Published: 15 October 2012
PDF: 4 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492H (15 October 2012); doi: 10.1117/12.927425
Show Author Affiliations
Shaivalini Singh, Banaras Hindu Univ. (India)
P. Chakrabarti, Banaras Hindu Univ. (India)
Moti Lal Nehru National Institute of Technology (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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