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Proceedings Paper

The role of separate confinement heterostructure layer in designing semiconductor nanostructured optoelectronic devices
Author(s): Gagik Shmavonyan; H. G. Asatryan
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Paper Abstract

Experiments show that the layer of separate confinement heterostructure (SCH) has a significant influence on the emission spectrum of semiconductor optical amplifiers (SOAs). Reducing the thickness of SCH layer could improve the uniformity of carrier distribution among multiple quantum wells (MQWs). When the thickness of the SCH layer changes from 120 nm to 30 nm, the operation current for SOAs to exhibit the full-width at halfmaximum (FWHM) spectral width of above 270 nm could be reduced from 500 mA to 160 mA.

Paper Details

Date Published: 15 October 2012
PDF: 4 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492A (15 October 2012);
Show Author Affiliations
Gagik Shmavonyan, State Engineering Univ. of Armenia (Armenia)
H. G. Asatryan, State Engineering Univ. of Armenia (Armenia)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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