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Proceedings Paper

NEGF analysis of double gate SiGe and GaAs tunnel FETs
Author(s): Rahul Mishra; Bahniman Ghosh
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Paper Abstract

In recent past extensive device simulation work has already been done on TFETs. Various ways have been suggested to model TFETs. In our paper we look at one such particular way to model these devices. The Non equilibrium green’s formalism has proved effective in modeling nano scale devices. We model complete SiGe and GaAs tunnel FET for the first time using the NEGF formalism, also taking acoustic phonon scattering into account. We analyze them on the grounds of I-V curve, Ion-Ioff ration and subthreshold slope. The poisson equation and the equilibrium statistical mechanical equation has been solved by providing the potential profile.

Paper Details

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490C (15 October 2012);
Show Author Affiliations
Rahul Mishra, Indian Institute of Technology Kanpur (India)
Bahniman Ghosh, Indian Institute of Technology Kanpur (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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